IEEE BCICTS

The IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) serves as a significant platform for sharing advancements in the fields of bipolar, BiCMOS, and compound semiconductor circuits and devices. This symposium features technical sub-committees that are specifically organized to address the rapidly evolving developments within these key areas. The event encourages submissions across a broad spectrum of advanced circuits, devices, and modeling techniques, with a particular focus on several critical topics. These topics include Bipolar/BiCMOS devices, circuits, and technologies, 5G integrated circuits (ICs), GaN high-power amplifiers (HPAs) and low-noise amplifiers (LNAs), InP terahertz power amplifiers (PAs), high-performance RF switch technologies, GaN high-electron-mobility transistors (HEMTs), and other wide bandgap power devices. Additionally, there is a notable emphasis on high-speed digital, mixed-signal, and electro-optic ICs.BCICTS has a rich history as an international gathering where esteemed experts come together to present their latest findings and results in the realm of bipolar, SiGe BiCMOS, and compound semiconductor technologies. The symposium not only facilitates knowledge exchange but also fosters collaboration among professionals in the field. This year, the event will take place at The Westin Copley Place in Boston, United States, providing an ideal setting for networking and sharing innovative ideas among participants.